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Keywords:

  • Gallium-arsenic compounds;
  • Single-source;
  • gallium;
  • arsenide;
  • precursors

Abstract

Reactions of GaX3 (X [DOUBLE BOND] Br, I) with As(SiMe3)3 in 1:1 and 2:1 mole ratios were investigated. For the latter reactant stoichiometry, substances having the empirical formulae AsBr3Ga2 (1) and Asl3Ga2 (2), the analogues of the previously reported single-source GaAs precursor (AsCl3Ga2)n, were isolated as yellow isolated as yellow insoluble powders. Low-temperature reactions in a 1:1 mole ratio resulted in the isolation of the adducts Br3Ga.As(SiMe3)3 (3) and I3Ga.As(SiMe3)3 (4). On the other hand, at room temperature the GaBr3 reaction resulted in a complex mixture from which no characterizable compounds were isolated, whereas the Gal3 reaction afforded the crystalline compound [I2GaAs(SiMe3)2]2 (5). The structures of 4 and 5 were elucidated by complete single-crystal X-ray analysis (crystal data: 4, monoclinic, space group P21/c, a = 16.497(2) Å, b = 9.629(1) Å, c = 16.658(2) Å, β = 113.21(1)°, V = 2432(1) Å3, Z = 4; 5, orthorhombic, space group Pbca, a = 14.279(2) Å, b = 17.509(2) Å, c = 13.818(2), Å, V = 3455(1) Å3, Z = 4).