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Keywords:

  • Chemical vapour deposition;
  • Copper;
  • Copper oxide;
  • Scanning electron microscopy;
  • MOCVD;
  • Surface morphology;
  • Carrier gas;
  • Cu(acac)2

Abstract

The unsubstituted bis-β-diketonato complex of copper, Cu(acac)2 (acac [DOUBLE BOND] pentane-3, 5-dionato), has been used to deposit both elemental copper and copper oxide thin films by metal–organic chemical vapour deposition (MOCVD). For all Cu(II) bis-β-diketonates, growth of oxygen-free layers requires the breakage of four copper–oxygen bonds present in the precursor. The influence of carrier gas composition on deposit morphology has been examined for six parameter sets: both hydrous and anhydrous streams, each for reducing (H2), inert (Ar) and oxidising (O2) environments.