The characterisation of GaAs on silicon using polarised laser light
Article first published online: 14 SEP 2004
Copyright © 1992 John Wiley & Sons Ltd.
Advanced Materials for Optics and Electronics
Volume 1, Issue 4, pages 189–195, August 1992
How to Cite
Morris, I. L., Jenkins, T. E. and Goodes, S. R. (1992), The characterisation of GaAs on silicon using polarised laser light. Adv. Mater. Opt. Electron., 1: 189–195. doi: 10.1002/amo.860010405
- Issue published online: 14 SEP 2004
- Article first published online: 14 SEP 2004
- Manuscript Accepted: 27 MAR 1992
- Manuscript Received: 3 FEB 1992
- Surface roughness;
- Rotating polariser multiple-angle-of-incidence ellipsometer
MBE-grown gallium arsenide epitaxial layers on silicon, with thicknesses between 0.1 and 8.1 μm, have been studied using a simple rotating polariser multiple-angle-of-incidence ellipsometer. From these data, information on the roughness of the surfaces of the layers and the anisotropy of the refractive index of the layers has been obtained. The results are compared with data obtained on the same samples using scanning electron microscopy and conventional spectroscopic ellipsometry.