A modified plasma source for controlled layer thickness synthesis in laser pulse vapour deposition (LPVD)
Article first published online: 14 SEP 2004
Copyright © 1993 John Wiley & Sons Ltd.
Advanced Materials for Optics and Electronics
Volume 2, Issue 1-2, pages 19–29, February 1993
How to Cite
Dietsch, R., Mai, H., Pompe, W. and Völlmar, S. (1993), A modified plasma source for controlled layer thickness synthesis in laser pulse vapour deposition (LPVD). Adv. Mater. Opt. Electron., 2: 19–29. doi: 10.1002/amo.860020104
- Issue published online: 14 SEP 2004
- Article first published online: 14 SEP 2004
- Manuscript Revised: 11 NOV 1992
- Manuscript Received: 29 JUN 1992
- Thin films;
- Laser ablation;
- X-ray mirrors;
- Plasma sources;
- UHV deposition equipment;
- Ni/C multilayer structures;
- SNMS depth profiling;
- TEM cross-section
The conventional thin film deposition equipment of LPVD has been modified for the preparation of nanometre-layer stacks of uniform thickness at reduced target/substrate separation. Therefore the planar target was replaced by a cylindrical one and the target motion regime has been modified.
During thin film deposition a substrate translation is preferred instead of the usual rotation technique. With this arrangement the emission characteristic of the plasma source can be computer controlled and tailored via a stepper-motor-driven manipulator for the desired layer thickness profile across an extended substrate. Thus, for example, a homogeneous film thickness is obtained even for lower target/substrate distances, and an appropriate deposition rate can be maintained.
First applications of the equipment are explained and compared with typical results of the conventional technique.