A modified plasma source for controlled layer thickness synthesis in laser pulse vapour deposition (LPVD)



The conventional thin film deposition equipment of LPVD has been modified for the preparation of nanometre-layer stacks of uniform thickness at reduced target/substrate separation. Therefore the planar target was replaced by a cylindrical one and the target motion regime has been modified.

During thin film deposition a substrate translation is preferred instead of the usual rotation technique. With this arrangement the emission characteristic of the plasma source can be computer controlled and tailored via a stepper-motor-driven manipulator for the desired layer thickness profile across an extended substrate. Thus, for example, a homogeneous film thickness is obtained even for lower target/substrate distances, and an appropriate deposition rate can be maintained.

First applications of the equipment are explained and compared with typical results of the conventional technique.