Article

Ceramic thin films deposited on Si(100) by laser ablation: Application as buffer layers for YBa2Cu3O7 films

  1. F. Sánchez,
  2. M. Varela*,
  3. X. Queralt,
  4. M. V. Carcía-Cuenca,
  5. J. Palau,
  6. R. Aguiar,
  7. J. L. Morenza

Article first published online: 14 SEP 2004

DOI: 10.1002/amo.860020113

Issue

Advanced Materials for Optics and Electronics

Advanced Materials for Optics and Electronics

Volume 2, Issue 1-2, pages 99–103, February 1993

Additional Information

How to Cite

Sánchez, F., Varela, M., Queralt, X., Carcía-Cuenca, M. V., Palau, J., Aguiar, R. and Morenza, J. L. (1993), Ceramic thin films deposited on Si(100) by laser ablation: Application as buffer layers for YBa2Cu3O7 films. Adv. Mater. Opt. Electron., 2: 99–103. doi: 10.1002/amo.860020113

Author Information

  1. Universitat de Barcelona, Department de Física Aplicada i Electrònica, Avda. Diagonal 647, E-08028, Barcelona, Spain

*Universitat de Barcelona, Department de Física Aplicada i Electrònica, Avda. Diagonal 647, E-08028, Barcelona, Spain

Publication History

  1. Issue published online: 14 SEP 2004
  2. Article first published online: 14 SEP 2004
  3. Manuscript Accepted: 15 OCT 1992
  4. Manuscript Received: 15 JUN 1992

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Keywords:

  • Buffer layers;
  • Laser ablation;
  • Superconducting films

Abstract

Ceramic thin films of yttria-stabilised zirconia (YSZ), SrTiO3(STO) and CeO2 have been deposited on Si(100) substrates by laser ablation. The films have been characterized by X-ray diffractometry, field emission scanning electron microscopy and secondary ion mass spectrometry (SIMS). The effects of the oxygen partial pressure during deposition and the substrate temperature were studied. All the films have preferential orientation: (h00) and (hh0) for STO and (hhh) for CeO2 and YSZ. The films show a low density of particulates and a very smooth surface. SIMS profiles indicate a low interdiffusion between film and silicon. One of the applications of these materials is their use as a buffer layer for the growth of YBCO on silicon. Because both materials are highly reactive, it is necessary to put a barrier between YBCO and silicon. For this purpose we used the ceramic films previously deposited in order to obtain superconducting YBCO films. The deposited YBCO films present good superconducting properties with zero resistance at temperatures between 80 and 85 K.

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