Gain and dynamics of excitons in MOVPE-grown ZnSe/ZnSxSe1 − x heterostructures



Optically pumped stimulated emission in ZnSe/ZnSxSe1 − x heterostructures grown by MOVPE has been observed up to 170 K. Gain measurements have been performed using the variable stripe length method. The underlying gain mechanism at 25 K is atributed to an excitonexciton scattering process. Photoluminescence excitation spectra and the temporal evolution of the luminescence indicate a transfer process from the ZnSxSe1 − x barrier into the ZnSe active layer.