Experimental and theoretical aspects of electrical characteristics of Au/ZnSe/GaAs heterostructures



We present results of a theoretical and experimental study of Au[BOND]ZnSe[BOND]GaAs heterostructures. In the theoretical part we report the band diagrams, charge densities and static IV curves obtained from a detailed numerical analysis. In the experimental part we give the results for the static IV curves and frequency-dependent admittance and impedance at different bias voltages for an Au[BOND]ZnSe[BOND]GaAs heterostructure with a ZnSe layer of 2.75 μm thickness. An explicit analysis of the data shows that the system can be represented by an equivalent circuit of two RC elements in series corresponding to the ZnSe[BOND]GaAs and Au[BOND]Se heterojunctions.