Effects of rapid thermal annealing on the electrical properties of Hg1 − xCdxTe bulk crystals
Article first published online: 14 SEP 2004
Copyright © 1994 John Wiley & Sons, Ltd.
Advanced Materials for Optics and Electronics
Volume 3, Issue 1-6, pages 177–182, January 1994
How to Cite
Rubio, J. A. L., Sangrador, J. and Rodríguez, T. (1994), Effects of rapid thermal annealing on the electrical properties of Hg1 − xCdxTe bulk crystals. Adv. Mater. Opt. Electron., 3: 177–182. doi: 10.1002/amo.860030125
- Issue published online: 14 SEP 2004
- Article first published online: 14 SEP 2004
- Mercury Cadmium;
- Hall characterization
This paper reports the change in the bulk transport properties of p-type MCT samples induced by a rapid thermal annealing (RTA) process. This change is produced homogeneously within the crystal without interchange of mercury with the surrounding atmosphere. The carrier concentration varies towards an equilibrium value that depends only on the annealing temperature. For the material and temperatures investigated (250–420°C) the equilibrium carrier concentration depends exponentially on the inverse of the temperature, its value ranges between 1 × 1017 and 4 × 1017 cm−3. The time needed to reach equilibrium is a function of the temperature, varying from 10 s at 420°C to 200 s at 250°C. The hole mobility is also affected by the RTA process, its evolution being a function of the process temperature and time. A model is proposed to explain these modifications based on a reaction of generation-annhilitation of mercury vacancies and interstitials that would take place within the crystal with no external interaction.