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Control of composition and substitutional acceptor density during crystal growth of CdTe

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Abstract

A correlation between carrier concentration and the concentration of important substitutional acceptors (AgCd, CuCd, PTe) determined from photoluminescence analysis is reported for p-and n-type CdTe crystals grown by various Bridgman techniques. We consider that the results show that the concentrations and distribution coefficients are controlled by the densities of Cd(Te) vacancies which are present under crystal growth conditions.

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