Chemically amplified resists: Chemistry and processes
Article first published online: 14 SEP 2004
Copyright © 1994 John Wiley & Sons Ltd.
Advanced Materials for Optics and Electronics
Volume 4, Issue 2, pages 83–93, March/April 1994
How to Cite
Reichmanis, E., Houlihan, F. M., Nalamasu, O. and Neenan, T. X. (1994), Chemically amplified resists: Chemistry and processes. Adv. Mater. Opt. Electron., 4: 83–93. doi: 10.1002/amo.860040205
- Issue published online: 14 SEP 2004
- Article first published online: 14 SEP 2004
- Manuscript Revised: 20 OCT 1992
- Manuscript Received: 18 AUG 1992
- Electronic materials
Continued advances in mocroelectronic device fabrication are trying the limits of conventional lithographic techniques. In particular, conventional photoresist materials are not appropriate for use with the new technologies that will be necessary for sub-0.5 μm lithography. One approach to the desing of new resist chemistries involves the concept of chemical amplification, where one photochemical event can lead to a cascade of subsequent reactions that effect a change in solubility of the parent material. The most well-known chemically amplified resists utilise photchemically generated acid to catalyse crosslinking or deprotection reactions. This paper reviews the acid generator, crosslinking, deprotection and depolymerisation chemistries that have been evaluated for chemical amplification resist processes. Additionaly, process characteristics and resist performance relative to the process environment are addressed.