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Article
Identification of the impurity phase in chemically deposited CdS thin films
Article first published online: 14 SEP 2004
DOI: 10.1002/amo.860040604
Copyright © 1994 John Wiley & Sons Ltd.
Issue
1616-3028/asset/cover.gif?v=1&s=aa0e18d3cb78e9b2ca8405559bd0b600d037e2d3 "Advanced Materials for Optics and Electronics")
Advanced Materials for Optics and Electronics
Volume 4, Issue 6, pages 407–412, November/December 1994
Additional Information
How to Cite
Sebastian, P. J. and Hu, H. (1994), Identification of the impurity phase in chemically deposited CdS thin films. Adv. Mater. Opt. Electron., 4: 407–412. doi: 10.1002/amo.860040604
Publication History
- Issue published online: 14 SEP 2004
- Article first published online: 14 SEP 2004
- Manuscript Received: 6 MAY 1994
- Manuscript Accepted: 6 MAY 1994
- Abstract
- References
- Cited By
Abstract
Identification of the impurity phase present in chemically deposited CdS thin films and in the precipitate used for screen printing CdS/CdTe solar cells is reported in this paper. X-ray diffraction (XRD) studies of the films and the precipitate showed that the impurity phase is a mixture of cadmium oxide sulphate (Cd3O2SO4) and cadmium oxide (CdO). Analysis of the films and the powders obtained using thiourea (TU) and thioacetamide (TA) as sulphursing agents showed that the impurity phase is predominantly present when TU is used in the chemical bath. The high conductivity shown by chemically deposited CdS films (using TU) when annealed at higher temperatures in air is attributed to the predominance of the conducting CdO phase in the film.