Impurity study of CdZnTe substrates used for LPE HgCdTe
Article first published online: 14 SEP 2004
Copyright © 1995 John Wiley & Sons Ltd.
Advanced Materials for Optics and Electronics
Volume 5, Issue 2, pages 87–99, March/April 1995
How to Cite
Bollong, A. B., Feldewerth, G., Tower, J. P., Tobin, S. P., Kestigian, M., Norton, P. W., Schaake, H. F. and Ard, C. K. (1995), Impurity study of CdZnTe substrates used for LPE HgCdTe. Adv. Mater. Opt. Electron., 5: 87–99. doi: 10.1002/amo.860050205
- Issue published online: 14 SEP 2004
- Article first published online: 14 SEP 2004
- Manuscript Accepted: 22 NOV 1994
- Manuscript Received: 16 NOV 1993
Impurites were tracked from raw material purification through to CdZnTe processing in an effort to identify the sources of elements which impact on IR photodetector performance. Chemical analyses by GDMS and ZCGFAA effectively showed the levels of impurities introduced into CdZnTe substrate material from the manufacturing processes. A new purification process (ISDZR) for raw materials was developed, resulting in improved CdZnTe substrate purity. Substrate CU contamination was found to have detrimental effects on LPE layer and device electrical properties for lightly doped HgCdTe.