Based on a lecture presented at IWMP-4 Fourth International Workshop on Purification of Materials for Crystal Growth and Glass Processing, Bristol, September 1993.
The single-molecule approach to the deposition of compound semiconducting materials by MOCVD and related methods†
Article first published online: 14 SEP 2004
Copyright © 1995 John Wiley & Sons Ltd.
Advanced Materials for Optics and Electronics
Volume 5, Issue 2, pages 117–134, March/April 1995
How to Cite
O'Brient, P. and Haggata, S. (1995), The single-molecule approach to the deposition of compound semiconducting materials by MOCVD and related methods. Adv. Mater. Opt. Electron., 5: 117–134. doi: 10.1002/amo.860050208
- Issue published online: 14 SEP 2004
- Article first published online: 14 SEP 2004
- Manuscript Accepted: 29 OCT 1994
- Manuscript Received: 25 SEP 1993
The last 10 years have seen a number of chemists begin to take a serious interest in the deposition of materials such as compound semiconductors. Chemical deposition routes have a number of potential advantages, many of which arise from the fact that growth can take place well away from equilibrium. Chemists are particularly attracted by the idea that a volatile single molecule can deliver the elements of a compound semiconductor to the reaction site. In the present article recent advances in the deposition of compound semiconductors, principally II/VI (12/16) or III/V (13/15) materials, from single-molecule precursors will be reviewed. The chemistry of these precursors will be discussed in terms of both their synthesis and properties and the effect of the mechanism of their decomposition on the quality of deposited material.