The single-molecule approach to the deposition of compound semiconducting materials by MOCVD and related methods

Authors

  • Paul O'Brient,

    Corresponding author
    1. Department of Chemistry, Queen Mary and Westfield College, University of London, Mile End Road, London E1 4NS, U.K.
    Current affiliation:
    1. Department of Chemistry, Imperial College of Science, Technology and Medicine, London SW7 2AZ, U.K.
    • Department of Chemistry, Queen Mary and Westfield College, University of London, Mile End Road, London E1 4NS, U.K.
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  • Stephen Haggata

    1. Department of Chemistry, Queen Mary and Westfield College, University of London, Mile End Road, London E1 4NS, U.K.
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  • Based on a lecture presented at IWMP-4 Fourth International Workshop on Purification of Materials for Crystal Growth and Glass Processing, Bristol, September 1993.

Abstract

The last 10 years have seen a number of chemists begin to take a serious interest in the deposition of materials such as compound semiconductors. Chemical deposition routes have a number of potential advantages, many of which arise from the fact that growth can take place well away from equilibrium. Chemists are particularly attracted by the idea that a volatile single molecule can deliver the elements of a compound semiconductor to the reaction site. In the present article recent advances in the deposition of compound semiconductors, principally II/VI (12/16) or III/V (13/15) materials, from single-molecule precursors will be reviewed. The chemistry of these precursors will be discussed in terms of both their synthesis and properties and the effect of the mechanism of their decomposition on the quality of deposited material.

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