Deposition, annealing and characterisation of high-dielectric-constant metal oxide films
Article first published online: 14 SEP 2004
Copyright © 1995 John Wiley & Sons Ltd.
Advanced Materials for Optics and Electronics
Volume 5, Issue 3, pages 163–175, May/June 1995
How to Cite
Treichel, H., Mitwalsky, A., Tempel, G., Zorn, G., Bohling, D. A., Coyle, K. R., Felker, B. S., George, M., Kern, W., Lane, A. P. and Sandler, N. P. (1995), Deposition, annealing and characterisation of high-dielectric-constant metal oxide films. Adv. Mater. Opt. Electron., 5: 163–175. doi: 10.1002/amo.860050305
- Issue published online: 14 SEP 2004
- Article first published online: 14 SEP 2004
- Manuscript Accepted: 23 DEC 1994
- Manuscript Received: 13 SEP 1994
- high dielectric constant;
- metal oxides;
Flims of metal oxides, such as Ta2O5, Nb2O5, Al2O3, HfO2, ZrO2 and TiO2 have been fabricated by use of different precursor materials, deposition techniques and annealing techniques. Several analytical methods were applied to study the layers. New data of fundamental properties of these metal oxides are reported and related to practical features that are of importance in device design and manufacturing of advanced, highly integrated devices. This overview may facilitate the choice of an optimal combination of precursor material, deposition technique and corresponding annealing procedure for a specific application of these metal oxide films in microelectronics.