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Photoreflectance characterisation of GaAs and GaAs/GaAIAs structures grown by MOCVD



Epitaxial undoped and doped (Si and Zn) GaAs and GaAIAs layers as well as heterostructures of GaAs/GaAIAs have been grown in an atmospheric pressure, vertical MOCVD system. Room temperature photoreflectance (PR) has been applied to characterise the layers and heterostructures as well as multiple quantum wells. The surface- and interface-related PR has been studied by application of Kramers–Kronig analysis. A decomposition of the PR spectrum into spectra connected with the surface region and with the interface has been proposed.

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