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Abstract

To treat fluctuating perturbation potentials in semiconductors, it is necessary to take quantum corrections to the Thomas-Fermi approximation into account. A generalization of the Bloch matrix, valid for arbitrary degrees of degeneracy, is used to handle these quantum corrections. The generalized Bloch equation and the results of a treatment of optical transitions in high-doped semiconductors with this method are given. The concept of effective band edges is shown to be useful for the problem on hand.