Zur Elektronenstreuung an ionisierten Störstellen in Halbleitern mit isotroper effektiver Masse

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Abstract

A selfconsistent scattering-potential for a ionized impurity in a semiconductor with a isotropic effective mass and arbitrary degree of degeneracy is derived. For this scattering-potential the mobility formula for electrons is deduced, the corrections to the Brooks-Herring-formula are evaluated for the case of n-type GaAs.

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