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Keywords:

  • Disordered systems;
  • Metal-insulator transition;
  • Spin-orbit scattering

Abstract

Doping amorphous GaxAr1−x mixtures with the strong spin-orbit scatterer Bi has a dramatic effect on the metal-insulator transition (MIT) occurring in this system at a critical metal atomic concentration xc: (i) the MIT is shifted from xc = 0.36 ± 0.01 (corresponding to a critical metal volume fraction vc = 0.19 ± 0.01) of the undoped system to a lower value of xc = 0.25 ± 0.01 (vc = 0.14 ± 0.01) for (Ga0.9Bi0.1)xAr1−x and (ii) the critical exponent v and g of the dc conductivity and Hall coefficient, respectively, change from v′ = 0.5 ± 0.1 and g′ = 0 for the undoped samples to v = 1.3 ± 0.3 and g = 0.5 ± 0.1 for (Ga0.9Bi0.1)xAr1−x.