Spin-fluctuation gating in the c-axis non-Drude conductivity of the high Tc cuprates

Authors

  • Sergei I. Mukhin,

    1. Moscow Institute of Steel and Alloys, Theoretical Physics Department, Leninskii Pr. 4, 117936 Moscow B-49, Russia
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  • Bumsoo Kyung,

    1. Moscow Institute of Steel and Alloys, Theoretical Physics Department, Leninskii Pr. 4, 117936 Moscow B-49, Russia
    Current affiliation:
    1. Max-Planck-Institut für Physik Komplexer Systeme, Bayreuther Straße 40, Haus 16, D-01187 Dresden, Germany
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  • Richard A. Ferrell

    1. Department of Physics, Center for Superconductivity Research, University of Maryland, College Park, MD 20742, USA
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Abstract

An ideal antiferromagnetic (AF) ordering of the spins of the CuO layers of an underdoped cuprate prevents the low energy tunneling of the charge carriers between the layers. In order to obtain a non-vanishing c-axis conductivity (σc), we invoke ground state fluctuations of the spin system. These provide a frequency-dependent gating effect by changing the direction of the AF order parameter within one layer relative to that in a neighboring layer, thereby permitting some tunneling. The calculated σc compares favorably with experimental data in a) being small and b) having a weak frequency dependence of distinctly non-Drude form.

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