Metal oxide gate electrodes for advanced CMOS technology
Version of Record online: 10 FEB 2004
Copyright © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Annalen der Physik
Volume 13, Issue 1-2, pages 31–34, January 2004
How to Cite
Fröhlich, K., Hušeková, K., Oszi, Z., Hooker, J.C., Fanciulli, M., Wiemer, C., Dimoulas, A., Vellianitis, G. and Roozeboom, F. (2004), Metal oxide gate electrodes for advanced CMOS technology. Ann. Phys., 13: 31–34. doi: 10.1002/andp.200310038
- Issue online: 10 FEB 2004
- Version of Record online: 10 FEB 2004
- Manuscript Accepted: 16 OCT 2003
- Manuscript Received: 11 SEP 2003
- conducting oxides.
We have prepared RuO2 and SrRuO3 thin films for application as gate electrodes in CMOS technology. RuO2 and SrRuO3 films exhibit satisfactory stability in oxygen atmosphere at elevated temperatures. RuO2 films decompose in reducing atmosphere. Extracted work function values for RuO2 electrode are around 5.1 eV, confirming that RuO2 is a suitable candidate for pMOS gate electrode application.