SrBi2Nb2O9 (SBN) films were grown by pulsed laser deposition on various substrates suitable for microwaves applications. Pure c-axis oriented SBN films on (100) MgO and (100) LaAlO3 are epitaxially grown. The crystalline quality evaluated by the rocking curves width is strongly correlated to the film-substrate mismatch (Δohgr; = 0.9–2° on MgO and Δω = 0.3–0.4° on LaAlO3). SBN growth on sapphire is more complex. In fact, on R-plane as well as on C-plane, XRD evidences the coexistence of various orientations of the SBN films. In spite of the coexistence of several orientations epitaxial growth was evidenced, strongly influencing the microstructure.