Pulsed laser deposited SrBi2Nb2O9 thin films grown on various substrates compatible with microwaves applications

Authors

  • A. Rousseau,

    1. Institut de Chimie de Rennes, Laboratoire de Chimie du Solide et Inorganique Moléculaire, UMR 6511, CNRS-Université de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex, France
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  • J.-R. Duclère,

    1. Institut de Chimie de Rennes, Laboratoire de Chimie du Solide et Inorganique Moléculaire, UMR 6511, CNRS-Université de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex, France
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  • M. Guilloux-Viry,

    1. Institut de Chimie de Rennes, Laboratoire de Chimie du Solide et Inorganique Moléculaire, UMR 6511, CNRS-Université de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex, France
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  • V. Bouquet,

    1. Institut de Chimie de Rennes, Laboratoire de Chimie du Solide et Inorganique Moléculaire, UMR 6511, CNRS-Université de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex, France
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  • A. Perrin

    1. Institut de Chimie de Rennes, Laboratoire de Chimie du Solide et Inorganique Moléculaire, UMR 6511, CNRS-Université de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex, France
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Abstract

SrBi2Nb2O9 (SBN) films were grown by pulsed laser deposition on various substrates suitable for microwaves applications. Pure c-axis oriented SBN films on (100) MgO and (100) LaAlO3 are epitaxially grown. The crystalline quality evaluated by the rocking curves width is strongly correlated to the film-substrate mismatch (Δohgr; = 0.9–2° on MgO and Δω = 0.3–0.4° on LaAlO3). SBN growth on sapphire is more complex. In fact, on R-plane as well as on C-plane, XRD evidences the coexistence of various orientations of the SBN films. In spite of the coexistence of several orientations epitaxial growth was evidenced, strongly influencing the microstructure.

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