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Keywords:

  • field effect transistor;
  • high temperature superconductor;
  • proximity effect.

Abstract

We present a possibility to raise the transition temperature of cuprate superconductors by using the field-effect-transistor type devices. The basic mechanism is based on the proximity effect of the two off-diagonal-long-range-orders in the superconducting phase of the cuprates, namely, the singlet resonating-valence-bond order and the bose condensation. Our model is based on the mean field theory of the t-J model.