Making the transition temperature of cuprate superconductors higher by using the field-effect-transistor geometry

Authors


Abstract

We present a possibility to raise the transition temperature of cuprate superconductors by using the field-effect-transistor type devices. The basic mechanism is based on the proximity effect of the two off-diagonal-long-range-orders in the superconducting phase of the cuprates, namely, the singlet resonating-valence-bond order and the bose condensation. Our model is based on the mean field theory of the t-J model.

Ancillary