Influence of gamma radiation on the electrical properties of MnO and MnO/TeO2 thin films

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Abstract

The pure and mixed oxide materials, such as manganese oxide (MnO) and tellurium dioxide (TeO2), in the form of thermally deposited thin films were studied in terms of their susceptibility to gamma radiation exposure. Radiation-induced changes in their electrical properties indicated the level of radiation damage. These thin film devices showed increase in values of current by the increase in the radiation dose. The dose response was found to be composition- and thickness-dependant.

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