Leakage current through high permittivity thin films

Authors

  • H. Schroeder,

    1. Institut für Elektrokeramische Materialien am Institut für Festkörperforschung (IFF), and cni – Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
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  • S. Schmitz

    1. Institut für Elektrokeramische Materialien am Institut für Festkörperforschung (IFF), and cni – Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
    2. Present address: Stiftung CAESAR, 53175 Bonn, Germany
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Abstract

For the leakage current through high-permittivity, low-electronic mobility, perovskite-type thin films a bulk-limited conduction mechanism is suggested, in contrast to the often assumed interface injection limitation. This model can successfully describe measured leakage data of field, temperature, thickness and electrode dependence in SrTiO3 and Ba0.7Sr0.3TiO3 thin films.

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