A tale of two vacancies

Authors

  • W. Cheng,

    1. Physics Department, University of California and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
    Search for more papers by this author
  • L. Liu,

    1. Physics Department, University of California and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
    Search for more papers by this author
  • P.Y. Yu,

    Corresponding author
    1. Physics Department, University of California and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
    • Physics Department, University of California and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
    Search for more papers by this author
  • Z.X. Ma,

    1. Physics Department, University of California and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
    Search for more papers by this author
  • S.S. Mao

    1. Physics Department, University of California and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
    Search for more papers by this author

  • This article is dedicated to Manuel Cardona.

Abstract

In this paper we have applied first-principle density-functional theory to calculate some of the interesting roles played by vacancies in material properties, such as magnetic properties and complex formation. We use as examples our recent results on vacancies in group III-V semiconductors like GaN and II-VI semiconductor like CdTe.

Ancillary