This article is dedicated to Dieter Vollhardt on the occasion of his 60th birthday.
Electron-electron interactions and the metal-insulator transition in heavily doped silicon†
Article first published online: 13 SEP 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Annalen der Physik
Special Issue: Special Topic Issue “Electronic Correlations in Models and Materials”
Volume 523, Issue 8-9, pages 599–611, August 2011
How to Cite
v. Löhneysen, H. (2011), Electron-electron interactions and the metal-insulator transition in heavily doped silicon. Ann. Phys., 523: 599–611. doi: 10.1002/andp.201100034
- Issue published online: 13 SEP 2011
- Article first published online: 13 SEP 2011
- Manuscript Accepted: 6 MAR 2011
- Manuscript Received: 14 FEB 2011
- Metal-insulator transition;
- heavily doped silicon;
- electron-electron interaction;
- Hubbard splitting;
- thermoelectric power;
- specific heat;
- electrical conductivity;
- critical behavior;
- dynamic scaling.
The metal-insulator (MI) transition in Si:P can be tuned by varying the P concentration or – for barely insulating samples – by application of uniaxial stress S. On-site Coulomb interactions lead to the formation of localized magnetic moments and the Kondo effect on the metallic side, and to a Hubbard splitting of the donor band on the insulating side. Continuous stress tuning allows the observation of finite-temperature dynamic scaling of σ (T,S) and hence a reliable determination of the critical exponent μ of the extrapolated zero-temperature conductivity σ (0) ∼ | S - Sc |μ, i.e., μ = 1, and of the dynamical exponent z = 3. The issue of half-filling vs. away from half-filling of the donor band (i.e., uncompensated vs. compensated semiconductors) is discussed in detail.