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Probing the thermal response of a silicon field emitter by ultra-fast Laser Assisted Atom Probe Tomography

Authors

  • Angela Vella,

    Corresponding author
    1. Groupe de Physique des Materiaux UMR CNRS 6634 and CORIA UMR CNRS 6614- UFR Sciences Site du Madrillet, Avenue de l'Université - B.P. 12 76801 Saint Etienne du Rouvray, France
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  • Elena P. Silaeva,

    1. Groupe de Physique des Materiaux UMR CNRS 6634 and CORIA UMR CNRS 6614- UFR Sciences Site du Madrillet, Avenue de l'Université - B.P. 12 76801 Saint Etienne du Rouvray, France
    2. Laboratoire Hubert Curien, UMR CNRS 5516/Université Jean Monnet, 18 rue Benoît Lauras, 42000 Saint-Etienne, France
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  • Jonathan Houard,

    1. Groupe de Physique des Materiaux UMR CNRS 6634 and CORIA UMR CNRS 6614- UFR Sciences Site du Madrillet, Avenue de l'Université - B.P. 12 76801 Saint Etienne du Rouvray, France
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  • Tatiana E. Itina,

    1. Laboratoire Hubert Curien, UMR CNRS 5516/Université Jean Monnet, 18 rue Benoît Lauras, 42000 Saint-Etienne, France
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  • Bernard Deconihout

    1. Groupe de Physique des Materiaux UMR CNRS 6634 and CORIA UMR CNRS 6614- UFR Sciences Site du Madrillet, Avenue de l'Université - B.P. 12 76801 Saint Etienne du Rouvray, France
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Abstract

The interaction between an ultrashort laser pulse and a sub-wavelength silicon tip under a high static electric field is investigated numerically and experimentally. Using an original autocorrelation setup of the laser-assisted atom probe tomography, the temporal evolution of the lattice temperature at the tip apex is experimentally monitored. An ultrafast cooling process, related to a confinement of the heating at the surface, is reported. This confinement is well predicted by a new model taking into account the free charges generation by photon absorption, their drift-diffusion motion under the electric field and their energy relaxation to the lattice.

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