Strong-field photoemission from silicon field emitter arrays

Authors

  • Phillip D. Keathley,

    1. Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
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  • Alexander Sell,

    1. Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
    2. Center for Free-Electron Laser Science, DESY and Dept. of Physics University of Hamburg, Hamburg, Germany
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  • William P. Putnam,

    1. Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
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  • Stephen Guerrera,

    1. Microsystems Technology Laboratories, Massachusetts Institute of Technology
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  • Luis Velásquez-García,

    1. Microsystems Technology Laboratories, Massachusetts Institute of Technology
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  • Franz X. Kärtner

    Corresponding author
    1. Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
    2. Center for Free-Electron Laser Science, DESY and Dept. of Physics University of Hamburg, Hamburg, Germany
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Abstract

Strong-field photoemission from silicon field emitter arrays is investigated experimentally and results are explained using a “simple-man” optical-field emission model. Spectra are collected throughout an in-situ laser annealing process, leading to a red-shift in emitted electron energy along with an increase in electron yield. After the annealing process, a high energy plateau is formed which is explained through optical-field emission along with electron re-scattering with the tip surface.

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