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Bulk Preparation of Si–SiOx Hierarchical Structures: High-Density Radially Oriented Amorphous Silica Nanowires on a Single-Crystal Silicon Nanocore

Authors

  • Hui Wang,

    1. Nano-organic Photoelectronic Laboratory, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101, China, Fax: (+86) 10-6487-9375
    2. Graduate School of Chinese Academy of Sciences, Beijing, 100101, China
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  • Xiaohong Zhang Prof.,

    1. Nano-organic Photoelectronic Laboratory, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101, China, Fax: (+86) 10-6487-9375
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  • Xiangmin Meng Prof.,

    1. Nano-organic Photoelectronic Laboratory, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101, China, Fax: (+86) 10-6487-9375
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  • Shaomin Zhou Dr.,

    1. Nano-organic Photoelectronic Laboratory, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101, China, Fax: (+86) 10-6487-9375
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  • Shikang Wu Prof.,

    1. Nano-organic Photoelectronic Laboratory, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101, China, Fax: (+86) 10-6487-9375
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  • Wensheng Shi Prof.,

    1. Nano-organic Photoelectronic Laboratory, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101, China, Fax: (+86) 10-6487-9375
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  • Shuittong Lee Prof.

    1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China, Fax: (+852) 2784-4696
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  • We thank the Chinese Academy of Sciences and the CAS-Croucher Funding Scheme for Joint Laboratories of the Croucher Foundation for financial support. The work in Hong Kong was supported by the Research Grants Council of Hong Kong SAR, China via a central allocation project (No. CityU 3/04C).

Abstract

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Vielversprechende Bausteine: Radial ausgerichtete amorphe Silica-Nanodrähte wurden in hoher Dichte auf einem einkristallinen Si-Nanokern durch einfache thermische Verdampfung von Silicium in Gegenwart von Zinn als Katalysator synthetisiert. Wahrscheinlich umfasst der Wachstumsprozess (siehe Schema) sowohl Dampf-flüssig-fest(VLS)- als auch Oxid-unterstützte (OA) Mechanismen. Gezeigt sind Rasterelektronenaufnahmen der Spezies 1 und 2.

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