Phosphine Oxide Monolayers on SiO2 Surfaces

Authors

  • Roie Yerushalmi Dr.,

    1. Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, and Materials Science Division, Lawrence Berkeley National Laboratory, University of California at Berkeley, USA, Berkeley, CA 94720, Fax: (+1) 510-643-7846
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  • Johnny C. Ho,

    1. Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, and Materials Science Division, Lawrence Berkeley National Laboratory, University of California at Berkeley, USA, Berkeley, CA 94720, Fax: (+1) 510-643-7846
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  • Zhiyong Fan,

    1. Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, and Materials Science Division, Lawrence Berkeley National Laboratory, University of California at Berkeley, USA, Berkeley, CA 94720, Fax: (+1) 510-643-7846
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  • Ali Javey Prof.

    1. Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, and Materials Science Division, Lawrence Berkeley National Laboratory, University of California at Berkeley, USA, Berkeley, CA 94720, Fax: (+1) 510-643-7846
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  • This work was funded by a LDRD from Lawrence Berkeley National Laboratory, MARCO/MSD Focus Research Center, a Junior Faculty Award from UC Berkeley (A.J.), a Human Frontiers Science Program fellowship (R.Y.), and an Intel Foundation Ph.D. Fellowship (J.H.).

Abstract

original image

Sicherer Halt: Vor allem Wasserstoffbrücken und nur zu einem geringen Maß kovalente Bindungen verankern Phosphanoxid-Monoschichten auf SiO2-Substraten (siehe Bilder). Anders als im Fall der gründlicher untersuchten polaren Phosphonsäuren ist hier die Bildung der Monoschichten selbstlimitierend. Diese Befunde können von großer Bedeutung für Anwendungen sein, bei denen Phosphanoxid-Monoschichten eingesetzt werden.

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