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Molecular Monolayer Nonvolatile Memory with Tunable Molecules

Authors

  • Junghyun Lee Dr.,

    1. NCRI, Center for Smart Molecular Memory, Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Republic of Korea), Fax: (+82) 31-299-5934
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  • Hojong Chang,

    1. Electronics and Telecommunications Research Institute (ETRI), 138, Gajeongno, Yuseong-gu, Daejeon 305-700 (Republic of Korea)
    2. Present address: Institute for Information Technology Convergence, KAIST, Daejeon 305-701 (Republic of Korea)
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  • Sangkwan Kim,

    1. Electronics and Telecommunications Research Institute (ETRI), 138, Gajeongno, Yuseong-gu, Daejeon 305-700 (Republic of Korea)
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  • Gyeong Sook Bang Dr.,

    1. NCRI, Center for Smart Molecular Memory, Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Republic of Korea), Fax: (+82) 31-299-5934
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  • Hyoyoung Lee Prof.

    1. NCRI, Center for Smart Molecular Memory, Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Republic of Korea), Fax: (+82) 31-299-5934
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  • This work was supported by the Creative Research Initiatives research fund (project title: Smart Molecular Memory) of the Ministry of Education Science and Technology (MEST) and the Korea Science and Engineering Foundation (KOSEF).

Abstract

original image

Einfach unvergesslich: 3 nm dicke selbstorganisierte Monoschichten aus Metallkomplexen mit Dialkylthiolatresten (siehe Bild) ergeben einen stabilen, reproduzierbar arbeitenden, nichtflüchtigen Datenspeicher aus einer molekularen Monoschicht (MMNVM) mit charakteristischen I-V-Hysteresekurven und Retentionszeiten für gepulste Zyklen aus Lesen, mehrfachem Schreiben, Löschen und mehrfachem Schreiben. Dies ist der erste spannungsgetriebene MMNVM, der allein auf Basis einer molekularen Monoschicht arbeitet.

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