Financial support for this work is from the Department of Energy Office of Basic Energy Sciences (grant number DE-SC0002368). T.Q.N. thanks the Camille Dreyfus Teacher Scholar Award and the Alfred Sloan Research Fellowship program. M.W. thanks the Natural Sciences and Engineering Research Council of Canada for a Postdoctoral Fellowship (grant number PDF-373502-2009). We thank the group of David Ginger at University of Washington for providing us a copy of their SKPM code. We are also grateful to R. Naik, F. Ouchen, and J. G. Grote (AFRL) for providing the DNA material.
Enhancement of the Photoresponse in Organic Field-Effect Transistors by Incorporating Thin DNA Layers†
Article first published online: 18 NOV 2013
Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 126, Issue 1, pages 248–253, January 3, 2014
How to Cite
Zhang, Y., Wang, M., Collins, S. D., Zhou, H., Phan, H., Proctor, C., Mikhailovsky, A., Wudl, F. and Nguyen, T.-Q. (2014), Enhancement of the Photoresponse in Organic Field-Effect Transistors by Incorporating Thin DNA Layers. Angew. Chem., 126: 248–253. doi: 10.1002/ange.201306763
- Issue published online: 23 DEC 2013
- Article first published online: 18 NOV 2013
- Manuscript Received: 1 AUG 2013
- Department of Energy Office of Basic Energy Sciences. Grant Number: DE-SC0002368
- Camille Dreyfus Teacher Scholar Award
- Natural Sciences and Engineering Research Council of Canada. Grant Number: PDF-373502-2009
- Dünne Filme;
- Photoresponsive Materialien
A mechanistic study of the DNA interfacial layer that enhances the photoresponse in n-type field-effect transistors (FET) and lateral photoconductors using a solution-processed fullerene derivative embedded with disperse-red dye, namely PCBDR, is reported. Incorporation of the thin DNA layer simultaneously leads to increasing the electron injection from non-Ohmic contacts into the PCBDR active layer in dark and to increasing the photocurrent under irradiation. Such features lead to the observation of the enhancement of the photoresponsivity in PCBDR FETs up to 103. Kelvin probe microscopy displays that in the presence of the DNA layer, the surface potential of PCBDR has a greater change in response to irradiation, which is rationalized by a larger number of photoinduced surface carriers. Transient absorption spectroscopy confirms that the increase in photoinduced carriers in PCBDR under irradiation is primarily ascribed to the increase in exciton dissociation rates through the PCBDR/DNA interface and this process can be assisted by the interfacial dipole interaction.