Preparation of Weavable, All-Carbon Fibers for Non-Volatile Memory Devices

Authors

  • Dr. Gengzhi Sun,

    1. School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
    Search for more papers by this author
    • These authors contributed equally to this work.

  • Dr. Juqing Liu,

    1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
    2. Singapore-Jiangsu Joint Research Center for Organic/Bio-Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816 (China)
    Search for more papers by this author
    • These authors contributed equally to this work.

  • Prof. Lianxi Zheng,

    Corresponding author
    1. School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
    • Lianxi Zheng, School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)===

      Hua Zhang, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)===

    Search for more papers by this author
  • Prof. Wei Huang,

    1. Singapore-Jiangsu Joint Research Center for Organic/Bio-Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816 (China)
    Search for more papers by this author
  • Prof. Hua Zhang

    Corresponding author
    1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
    • Lianxi Zheng, School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)===

      Hua Zhang, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)===

    Search for more papers by this author

  • This work was supported by MOE under AcRF Tier 2 (ARC 10/10, No. MOE2010-T2-1-060), AcRF Tier 1 (RG 61/12), and Start-Up Grant (M4080865.070.706022) in Singapore, the “973” project (2009CB930600), NNSFC (61376088, 51302134), NSF of Jiangsu Higher Education Institutions (13KJB510012), and NSF of Jiangsu Province (BK20130934). This research is also funded by the Singapore National Research Foundation and the publication is supported under the Campus for Research Excellence And Technological Enterprise (CREATE) programme (Nanomaterials for Energy and Water Management).

Abstract

original image

Verschachteltes Gedächtnis: Fasern aus mehrwandigen Kohlenstoffnanoröhren (MWCNTs) wurden mit einer dünnen Schicht von Graphenoxid (GO) bedeckt. Die MWCNT-Fasern wirken als Top- und Bottom-Elektroden, GO bildet die aktive Schicht. Zwei überkreuzt gestapelte MWCNT@GO-Fasern bilden eine Speicherzelle, die beschrieben und mehrfach ausgelesen werden kann.

Ancillary