These authors contributed equally to this work.
High-Quality Three-Dimensional Nanoporous Graphene†
Article first published online: 28 MAR 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 126, Issue 19, pages 4922–4926, May 5, 2014
How to Cite
Ito, Y., Tanabe, Y., Qiu, H.-J., Sugawara, K., Heguri, S., Tu, N. H., Huynh, K. K., Fujita, T., Takahashi, T., Tanigaki, K. and Chen, M. (2014), High-Quality Three-Dimensional Nanoporous Graphene. Angew. Chem., 126: 4922–4926. doi: 10.1002/ange.201402662
We would like to thank Professors Toshiaki Enoki and Yoji Koike for valuable discussions, and Dr. Atsushi Unemoto for CVD safety advice. This work was sponsored by JST-CREST “Phase Interface Science for Highly Efficient Energy Utilization”; the fusion research funds of “World Premier International (WPI) Research Center Initiative for Atoms, Molecules and Materials”, MEXT (Japan), a Grant-in-Aid for Scientific Research on Innovative Areas “Science of Atomic Layers” (25107003), and KAKENHI (24740216, 24656028, 23224010). H.-J.Q. is supported by the Japan Society for the Promotion of Science (JSPS) postdoctoral fellowship program (P12054).
- Issue published online: 2 MAY 2014
- Article first published online: 28 MAR 2014
- Manuscript Received: 24 FEB 2014
- MEXT. Grant Number: 25107003
- KAKENHI. Grant Numbers: 24740216, 24656028, 23224010
- Chemische Dampfabscheidung;
- Masselose Dirac-Fermionen;
- Nanoporöse Materialien
We report three-dimensional (3D) nanoporous graphene with preserved 2D electronic properties, tunable pore sizes, and high electron mobility for electronic applications. The complex 3D network comprised of interconnected graphene retains a 2D coherent electron system of massless Dirac fermions. The transport properties of the nanoporous graphene show a semiconducting behavior and strong pore-size dependence, together with unique angular independence. The free-standing, large-scale nanoporous graphene with 2D electronic properties and high electron mobility holds great promise for practical applications in 3D electronic devices.