We thank DARPA (N00421-98-1187), ONR (N00014-02-1-0909), and the NSF-MRSEC program through the Northwestern Materials Research Center (DMR-0076097) for support of this research.
Building Blocks for n-Type Organic Electronics: Regiochemically Modulated Inversion of Majority Carrier Sign in Perfluoroarene-Modified Polythiophene Semiconductors†
Article first published online: 22 AUG 2003
Copyright © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Angewandte Chemie International Edition
Volume 42, Issue 33, pages 3900–3903, August 25, 2003
How to Cite
Facchetti, A., Yoon, M.-H., Stern, C. L., Katz, H. E. and Marks, T. J. (2003), Building Blocks for n-Type Organic Electronics: Regiochemically Modulated Inversion of Majority Carrier Sign in Perfluoroarene-Modified Polythiophene Semiconductors. Angew. Chem. Int. Ed., 42: 3900–3903. doi: 10.1002/anie.200351253
- Issue published online: 22 AUG 2003
- Article first published online: 22 AUG 2003
- Manuscript Revised: 16 MAY 2003
- Manuscript Received: 24 FEB 2003
- conducting materials;
- electron transport;
- thiophene oligomers
A new family of perfluoroarene-modified thiophene semiconductors 1–3 has been synthesized to assess the influence of perfluoroarene introduction and regiochemistry on molecular and thin-film transistor properties. Compound 1 is an n-type semiconductor with a mobility approaching 0.1 cm2 V−1 s−1 whereas 2 and 3 exhibit p-type behavior. These results show that the origin of n-type carrier mobility is not solely a consequence of solution/film LUMO and HOMO energies.