Building Blocks for n-Type Organic Electronics: Regiochemically Modulated Inversion of Majority Carrier Sign in Perfluoroarene-Modified Polythiophene Semiconductors


  • We thank DARPA (N00421-98-1187), ONR (N00014-02-1-0909), and the NSF-MRSEC program through the Northwestern Materials Research Center (DMR-0076097) for support of this research.


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A new family of perfluoroarene-modified thiophene semiconductors 13 has been synthesized to assess the influence of perfluoroarene introduction and regiochemistry on molecular and thin-film transistor properties. Compound 1 is an n-type semiconductor with a mobility approaching 0.1 cm2 V−1 s−1 whereas 2 and 3 exhibit p-type behavior. These results show that the origin of n-type carrier mobility is not solely a consequence of solution/film LUMO and HOMO energies.