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Synthesis of Crystalline Silicon Tubular Nanostructures with ZnS Nanowires as Removable Templates

Authors

  • Junqing Hu Dr.,

    1. Advanced Materials Laboratory and Nanomaterials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan, Fax: (+81) 298-51-6280
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  • Yoshio Bando Dr.,

    1. Advanced Materials Laboratory and Nanomaterials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan, Fax: (+81) 298-51-6280
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  • Zongwen Liu Dr.,

    1. Advanced Materials Laboratory and Nanomaterials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan, Fax: (+81) 298-51-6280
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  • Jinhua Zhan Dr.,

    1. Advanced Materials Laboratory and Nanomaterials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan, Fax: (+81) 298-51-6280
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  • Dmitri Golberg Dr.,

    1. Advanced Materials Laboratory and Nanomaterials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan, Fax: (+81) 298-51-6280
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  • Takashi Sekiguchi Dr.

    1. Advanced Materials Laboratory and Nanomaterials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan, Fax: (+81) 298-51-6280
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  • This work was supported by the Japan Society for the Promotion of Science (JSPS) Fellowship tenable at the National Institute for Materials Science, Tsukuba, Japan.

Abstract

original image

Silicon epitaxy on ZnS nanowires results in the formation of ZnS/Si core/shell nanowires; chemical removal of the zinc blende nanowire templates produces monocrystalline silicon tubular nanostructures with outer diameters of about 60–180 nm, wall thicknesses of about 20–60 nm, and lengths of several micrometers (see picture). The electron diffraction pattern of an individual nanostructure (inset) confirmed the presence of single-crystalline silicon.

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