We thank DARPA (MDA972-03-1-0023) and ONR (N00014-02-1-0909, N00014-02-1-0381) for support of this research, and the Northwestern Materials Research Center (NSF-MRSEC DMR-0076097) for characterization facilities. We also thank Charlotte Stern for single-crystal X-ray diffraction data collection and Matthew Russell for aid with SEM measurements.
High-Mobility Air-Stable n-Type Semiconductors with Processing Versatility: Dicyanoperylene-3,4:9,10-bis(dicarboximides)†
Article first published online: 23 NOV 2004
Copyright © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Angewandte Chemie International Edition
Volume 43, Issue 46, pages 6363–6366, November 26, 2004
How to Cite
Jones, B. A., Ahrens, M. J., Yoon, M.-H., Facchetti, A., Marks, T. J. and Wasielewski, M. R. (2004), High-Mobility Air-Stable n-Type Semiconductors with Processing Versatility: Dicyanoperylene-3,4:9,10-bis(dicarboximides). Angew. Chem. Int. Ed., 43: 6363–6366. doi: 10.1002/anie.200461324
- Issue published online: 23 NOV 2004
- Article first published online: 23 NOV 2004
- Manuscript Received: 15 JUL 2004
- conducting materials;
- electron transport;
Taking up the semiconducting baton: Organic field-effect transistors fabricated with a new class of extremely electron-deficient cyanated perylene diimides are air-stable and exhibit n-type mobilities as high as 0.64 cm2 V−1 s−1 (see scheme). Devices can be fabricated from vapor-deposited and solution-cast films as well as top- and bottom-contact electrode configurations.