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Cluster-Based Holey Semiconductors

  1. Nicola Hüsing Prof. Dr.

Article first published online: 5 FEB 2008

DOI: 10.1002/anie.200705289

Issue

Angewandte Chemie International Edition

Angewandte Chemie International Edition

Volume 47, Issue 11, pages 1992–1994, February 28, 2008

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How to Cite

Hüsing, N. (2008), Cluster-Based Holey Semiconductors. Angew. Chem. Int. Ed., 47: 1992–1994. doi: 10.1002/anie.200705289

Author Information

  1. Institute of Inorganic Chemistry I, Ulm University, Albert-Einstein-Allee 11, 89081 Ulm, Germany, Fax: (+49) 731-50-22733

Publication History

  1. Issue published online: 22 FEB 2008
  2. Article first published online: 5 FEB 2008

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Keywords:

  • aerogels;
  • chalcogenides;
  • porous materials;
  • semiconductors;
  • Zintl ions
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Picking holes: Self-assembly of germanium chalcogenide clusters in the presence of metal ions is a new and promising approach to the synthesis of porous semiconducting networks. Even monolithic highly porous aerogels with high internal surface areas can be prepared by sol–gel processing of anionic [GeQ4]4−, [Sn2Q6]4−, or [Ge4Q10]4− clusters (Q=Se, S) in the presence of Pt2+ (see scheme).

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