A Practical, Self-Catalytic, Atomic Layer Deposition of Silicon Dioxide


  • This work was supported by the German Federal Ministry of Education and Research (BMBF 03N8701 and 03X5519) and the German Research Society (DFG) in the framework of FOR522. J.B. acknowledges the A. von Humboldt Foundation for a research fellowship (3-SCZ/1122413 STP).


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Molecular self-attack: According to mythology, a scorpion may sting itself to death; similarly, 3-aminopropyltriethoxysilane catalyzes its own hydrolysis in the atomic layer deposition (ALD) of SiO2 thin films and nanostructures. Between 120 and 200 °C, the growth rate is constant at 0.06 nm per ALD cycle. The SiO2 films are chemically and optically pure. SiO2 nanotubes of aspect ratio 500 exhibit smooth walls of accurately controlled thickness.