Communication

Soluble Direct-Band-Gap Semiconductors LiAsS2 and NaAsS2: Large Electronic Structure Effects from Weak As⋅⋅⋅S Interactions and Strong Nonlinear Optical Response†

  1. Tarun K. Bera1,
  2. Jung-Hwan Song Dr.2,
  3. Arthur J. Freeman Prof.2,
  4. Joon I. Jang Dr.2,
  5. John B. Ketterson Prof.2,
  6. Mercouri G. Kanatzidis Prof. Dr.1

Article first published online: 29 AUG 2008

DOI: 10.1002/anie.200801392

Issue

Angewandte Chemie International Edition

Angewandte Chemie International Edition

Volume 47, Issue 41, pages 7828–7832, September 29, 2008

Additional Information

How to Cite

Bera, Tarun K., Song, J.-H., Freeman, Arthur J., Jang, Joon I., Ketterson, John B. and Kanatzidis, Mercouri G. (2008), Soluble Direct-Band-Gap Semiconductors LiAsS2 and NaAsS2: Large Electronic Structure Effects from Weak As⋅⋅⋅S Interactions and Strong Nonlinear Optical Response. Angew. Chem. Int. Ed., 47: 7828–7832. doi: 10.1002/anie.200801392

Author Information

  1. 1

    Department of Chemistry, Northwestern University, 2145 Sheridan Rd., Evanston, IL 60208 (USA), Fax: (+1) 847-491-5937

  2. 2

    Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Rd., Evanston, IL 60208 (USA)

  1. †

    Financial support from the NSF (DMR-0801855 and DMR-0306731) and through its MRSEC program (DMR-0076097) at the Materials Research Center of Northwestern University is acknowledged. This work made use of the Analytical Service Laboratory (ASL) and the Electron Probe Instrumentation Center (EPIC), Northwestern University.

Publication History

  1. Issue published online: 24 SEP 2008
  2. Article first published online: 29 AUG 2008
  3. Manuscript Revised: 25 MAY 2008
  4. Manuscript Received: 23 MAR 2008

Funded by

  • NSF. Grant Numbers: DMR-0801855, DMR-0306731
  • MRSEC. Grant Number: DMR-0076097

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