These authors contributed equally to this work.
Communication
Spontaneous Growth of Highly Conductive Two-Dimensional Single-Crystalline TiSi2 Nanonets†
Article first published online: 2 SEP 2008
DOI: 10.1002/anie.200802744
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Issue
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Angewandte Chemie International Edition
Volume 47, Issue 40, pages 7681–7684, September 22, 2008
Additional Information
How to Cite
Zhou, S., Liu, X., Lin, Y. and Wang, D. (2008), Spontaneous Growth of Highly Conductive Two-Dimensional Single-Crystalline TiSi2 Nanonets. Angew. Chem. Int. Ed., 47: 7681–7684. doi: 10.1002/anie.200802744
- †
This work was financially supported by Boston College. We are grateful to Prof. J. Kong and Y.-P. Hsieh at MIT for their generous help in carrying out Raman experiments. E. Shaw at MIT provided assistance in XPS experiments. Dr. D. Wang helped with TEM.
Publication History
- Issue published online: 22 SEP 2008
- Article first published online: 2 SEP 2008
- Manuscript Received: 10 JUN 2008
Keywords:
- chemical vapor deposition;
- conducting materials;
- electron microscopy;
- nanostructures

Net result: Two-dimensional nanonets form spontaneously in a chemical vapor deposition reaction. All beams in the nanonet are single-crystalline nanobelts that are connected by 90° joints. The nanonets are roughly 15 nm thick and a few micrometers long and wide (see pictures for three images at different tilting angles), and they assume a C49 TiSi2 structure.

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