p-Type Field-Effect Transistors of Single-Crystal Zinc Telluride Nanobelts


  • This work was supported by the US NSF (DMR-0731382, CCF-0726815, and CCF-0702204) and by the State University of New York at Binghamton.


original image

Is ZnTe it great: Controlling the crystal-growth direction leads to formation of single-crystal ZnTe nanobelts along the 〈equation image00〉 direction. The nanobelts, which were synthesized in oleylamine at 250 °C, have a narrow thickness (<6 nm). The ZnTe nanobelts behave as p-type semiconductors in field-effect transistors (see picture).