This work was supported by the US NSF (DMR-0731382, CCF-0726815, and CCF-0702204) and by the State University of New York at Binghamton.
p-Type Field-Effect Transistors of Single-Crystal Zinc Telluride Nanobelts†
Version of Record online: 29 OCT 2008
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Angewandte Chemie International Edition
Volume 47, Issue 49, pages 9469–9471, November 24, 2008
How to Cite
Zhang, J., Chen, P.-C., Shen, G., He, J., Kumbhar, A., Zhou, C. and Fang, J. (2008), p-Type Field-Effect Transistors of Single-Crystal Zinc Telluride Nanobelts. Angew. Chem. Int. Ed., 47: 9469–9471. doi: 10.1002/anie.200804073
- Issue online: 20 NOV 2008
- Version of Record online: 29 OCT 2008
- Manuscript Received: 18 AUG 2008
- US NSF
- State University of New York at Binghamton
Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors.
Please note: Wiley Blackwell is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.