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Room-Temperature Growth of Silicon Oxide Nanofilms: New Opportunities for Plastic Electronics
Article first published online: 6 FEB 2009
DOI: 10.1002/anie.200805329
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Hoffmann, H. (2009), Room-Temperature Growth of Silicon Oxide Nanofilms: New Opportunities for Plastic Electronics. Angewandte Chemie International Edition, 48: 2457–2459. doi: 10.1002/anie.200805329
Publication History
- Issue published online: 17 MAR 2009
- Article first published online: 6 FEB 2009
- Abstract
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Keywords:
- atomic layer deposition;
- Langmuir–Blodgett films;
- nanostructures;
- organic transistors;
- silicon oxide
Graphical Abstract
A new generation of plastic transistors consisting primarily of light and flexible organic materials requires new fabrication methods which combine low-temperature, solution-phase processing with precise control in the nanometer range over the component dimensions. Ultrathin silicon oxide films, which serve as gate dielectric layers in these transistors, were recently grown at room temperature from polymer precursor films by a novel layer-by-layer deposition/oxidation process.
Abstract
A new generation of plastic transistors consisting primarily of light and flexible organic materials requires new fabrication methods which combine low-temperature, solution-phase processing with precise control in the nanometer range over the component dimensions. Ultrathin silicon oxide films, which serve as gate dielectric layers in these transistors, were recently grown at room temperature from polymer precursor films by a novel layer-by-layer deposition/oxidation process.