This work was supported by the Creative Research Initiatives research fund (project title: Smart Molecular Memory) of the Ministry of Education Science and Technology (MEST) and the Korea Science and Engineering Foundation (KOSEF).
Communication
Molecular Monolayer Nonvolatile Memory with Tunable Molecules†
Article first published online: 30 SEP 2009
DOI: 10.1002/anie.200902990
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Lee, J., Chang, H., Kim, S., Bang, G. and Lee, H. (2009), Molecular Monolayer Nonvolatile Memory with Tunable Molecules. Angew. Chem. Int. Ed., 48: 8501–8504. doi: 10.1002/anie.200902990
- †
Publication History
- Issue published online: 20 OCT 2009
- Article first published online: 30 SEP 2009
- Manuscript Revised: 4 AUG 2009
- Manuscript Received: 3 JUN 2009
Funded by
- Ministry of Education Science and Technology (MEST)
- Korea Science and Engineering Foundation (KOSEF)
Keywords:
- memory;
- molecular electronics;
- monolayers;
- ruthenium;
- self-assembly

An unforgettable monolayer: Dialkylthiolate-tethered metal complex self-assembled monolayers (see picture; thickness 3 nm) provide stable and reproducible molecular monolayer nonvolatile memory (MMNVM) characterized by its hysteretic current–voltage (I–V) properties and retention time for write–multiple read–erase–multiple read pulse cycles. This is the first known voltage-driven MMNVM using only a molecular monolayer.

1521-3773/asset/2002_left.gif?v=1&s=ac6b0d94a94d7ce7a210002b8096b42feffc0bcf)
1521-3773/asset/2002_right.gif?v=1&s=451042aa3415ae3ad0729984d26dee1866aca82e)
1521-3773/asset/cover.gif?v=1&s=412bc65bdcb3f0e34a94f27c1c13e908726694d4)