High-Performance Langmuir–Blodgett Monolayer Transistors with High Responsivity

Authors

  • Yang Cao,

    1. Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (P. R. China), Fax: (+86) 10-6275-7789
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  • Zhongming Wei,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, 00190 Beijing (P. R. China)
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  • Song Liu,

    1. Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (P. R. China), Fax: (+86) 10-6275-7789
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  • Lin Gan,

    1. Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (P. R. China), Fax: (+86) 10-6275-7789
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  • Xuefeng Guo Prof.,

    1. Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (P. R. China), Fax: (+86) 10-6275-7789
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  • Wei Xu Prof.,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, 00190 Beijing (P. R. China)
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  • Michael L. Steigerwald,

    1. Department of Chemistry and The Columbia University Energy Frontiers Research Center, Columbia University, New York, NY 10027 (USA)
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  • Zhongfan Liu Prof.,

    1. Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (P. R. China), Fax: (+86) 10-6275-7789
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  • Daoben Zhu Prof.

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, 00190 Beijing (P. R. China)
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  • We are grateful to C. Nuckolls from Columbia University for his help and enlightening discussions. We acknowledge primary financial support from FANEDD (No. 2007B21), MOST (2009CB623703 and 2008AA062503) and NSFC (Grant No. 50873004, 50821061, and 20833001).

Abstract

original image

Molecular field-effect transistors with bulk-like carrier mobility (as high as 0.04 cm2 V−1 s−1), high on/off current ratios (over 106), and high responsivity are formed by the integration of Langmuir–Blodgett techniques with sophisticated micro/nanofabrication. The transistors are formed from self-assembled uniform monolayers of copper phthalocyanine (CuPc) semiconductors and single-layer graphene as planar contacts.

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