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Formation of Boron-Based Films and Boron Nitride Layers by CVD of a Boron Ester

Authors

  • Priv.-Doz. Dr. Hermann Sachdev,

    Corresponding author
    1. Allgemeine und Anorganische Chemie FR 8.1, Universität des Saarlandes, Postfach 151150, 66041 Saarbrücken (Germany)
    2. Current address: Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz
    • Current address: Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz
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  • Dr. Frank Müller,

    1. Experimentalphysik, Naturwissenschaftlich-Technische Fakultät II – Physik und Mechatronik, Universität des Saarlandes, 66041 Saarbrücken (Germany)
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  • Prof. Dr. Stefan Hüfner

    1. Experimentalphysik, Naturwissenschaftlich-Technische Fakultät II – Physik und Mechatronik, Universität des Saarlandes, 66041 Saarbrücken (Germany)
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  • We gratefully acknowledge the financial support from the European Union under contract no. NMP4-CT-2004-013817 (Specific Targeted Research Project “Nanomesh”) and M. Schreck and S. Gsell, University of Augsburg, for the provision of substrates. CVD=chemical vapor deposition.

Abstract

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Directing films: The chemical vapor deposition of (MeO)3B on a multilayered Rh(111) substrate results in selective precursor decomposition leading to a boride-type film. This film can be oxidized into a well-ordered boron nitride monolayer (see picture with model structure), thus opening up a new approach to BN systems.

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