1521-3773/asset/2002_left.gif?v=1&s=ac6b0d94a94d7ce7a210002b8096b42feffc0bcf)
1521-3773/asset/olbannercenter.gif?v=1&s=c083e1920cd41ed129901c116018eab93b5ad3c4)
1521-3773/asset/2002_right.gif?v=1&s=451042aa3415ae3ad0729984d26dee1866aca82e)
Back Cover
Back Cover: Understanding the Origin of the Low Performance of Chemically Grown Silicon Nanowires for Solar Energy Conversion (Angew. Chem. Int. Ed. 10/2011)
Article first published online: 21 FEB 2011
DOI: 10.1002/anie.201100626
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Yuan, G., Aruda, K., Zhou, S., Levine, A., Xie, J. and Wang, D. (2011), Back Cover: Understanding the Origin of the Low Performance of Chemically Grown Silicon Nanowires for Solar Energy Conversion (Angew. Chem. Int. Ed. 10/2011). Angew. Chem. Int. Ed., 50: 2406. doi: 10.1002/anie.201100626
Publication History
- Issue published online: 24 FEB 2011
- Article first published online: 21 FEB 2011
- Abstract
- Cited By
Keywords:
- chemical vapor deposition;
- electrochemical impedance spectroscopy;
- energy conversion;
- silicon;
- solar cells
The mid-gap traps as a result of growth chemistry are the main reason for low solar energy conversion efficiencies of chemically grown silicon nanowires. In their Communication on page 2334 ff. D. Wang et al. compare silicon nanowires of the same dimension, doping level, and crystallinity obtained by either electroless etching or chemical growth by using electrochemical techniques.