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Back Cover: Understanding the Origin of the Low Performance of Chemically Grown Silicon Nanowires for Solar Energy Conversion (Angew. Chem. Int. Ed. 10/2011)

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Abstract

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The mid-gap traps as a result of growth chemistry are the main reason for low solar energy conversion efficiencies of chemically grown silicon nanowires. In their Communication on page 2334 ff. D. Wang et al. compare silicon nanowires of the same dimension, doping level, and crystallinity obtained by either electroless etching or chemical growth by using electrochemical techniques.

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